Transport properties of a two-dimensional electron liquid at high magnetic fields

Roberto D’Agosta, Roberto Raimondi, and Giovanni Vignale
Phys. Rev. B 68, 035314 – Published 14 July 2003
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Abstract

The chiral Luttinger liquid model for the edge dynamics of a two-dimensional electron gas in a strong magnetic field is derived from coarse-graining and a lowest Landau level projection procedure at arbitrary filling factors ν<1–without reference to the quantum Hall effect. Based on this model, we develop a formalism to calculate the Landauer-Büttiker conductances in generic experimental setups including multiple leads and voltage probes. In the absence of tunneling between the edges the “ideal” Hall conductances (Gij=e2ν/h if lead j is immediately upstream of lead i, and Gij=0 otherwise) are recovered. Tunneling of quasiparticles of fractional charge e* between different edges is then included as an additional term in the Hamiltonian. In the limit of weak tunneling we obtain explicit expressions for the corrections to the ideal conductances. As an illustration of the formalism we compute the current- and temperature-dependent resistance Rxx(I,T) of a quantum point contact localized at the center of a gate-induced constriction in a quantum Hall bar. The exponent α in the low-current relation Rxx(I,0)Iα2 shows a nontrivial dependence on the strength of the inter-edge interaction, and its value changes as e*VH, where VH=hI/νe2 is the Hall voltage, falls below a characteristic crossover energy ħc/d, where c is the edge wave velocity and d is the length of the constriction. The consequences of this crossover are discussed vis-a-vis recent experiments in the weak tunneling regime.

  • Received 11 February 2003

DOI:https://doi.org/10.1103/PhysRevB.68.035314

©2003 American Physical Society

Authors & Affiliations

Roberto D’Agosta* and Roberto Raimondi

  • Dipartimento di Fisica, Università di Roma “Tre,” via della Vasca Navale, 84, 00146 Roma, Italy,
  • Istituto Nazionale per la Fisica della Materia, Unità di Roma Tre
  • National Enterprise for Nanoscience and Nanotechnology, Scuola Normale Superiore, Via della Faggiola, 17/19, I-56126 Pisa, Italy

Giovanni Vignale

  • Department of Physics and Astronomy, University of Missouri Columbia, 65211, Columbia, Missouri, USA
  • National Enterprise for Nanoscience and Nanotechnology, Scuola Normale Superiore, Via della Faggiola, 17/19, I-56126 Pisa, Italy

  • *Electronic address: dagosta@fis.uniroma3.it

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Vol. 68, Iss. 3 — 15 July 2003

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